|
|
|
Welcome to GlobalSpec - a trusted source for engineers and industrial professionals.
Search GlobalSpec to find GaAs MESFET-related products, suppliers, datasheets and CAD.
 |
Product Alerts
Keep current on the latest products, new suppliers, and technical articles of interest to you. (See Topics) |
- Find Products/Services
- Find Product News
- Find Parts by Number
- Conduct Research
- Engineering Web Search
Products/Services for GaAs MESFET
...chips and silicon wafers for many different logic families. Examples include transistor-transistor logic (TTL), Fairchild Advanced Schottky TTL (FAST), emitter coupling logic (ECL), gallium arsenide (GaAs), indium phosphide (InP), silicon on sapphire... Search by Specification | Learn More about Semiconductor Foundry Services
...and generators include cross-bar switch technology (CBT), gallium arsenide (GaAs), integrated injection logic (I2L) and silicon on sapphire (SOS). Gunning with transceiver logic (GTL) and gunning with transceiver logic plus (GTLP) are also available... Search by Specification | Learn More about Parity Checkers and Generators
...is a silicon-germanium technology that combines the high speed of bipolar TTL with the low power consumption of CMOS. Other logic families for monostable multivibrators include cross-bar switch technology (CBT), gallium arsenide (GaAs), integrated... Search by Specification | Learn More about Monostable Multivibrators
...switch technology (CBT), Gallium arsenide (GaAs), integrated injection logic (I2L) and silicon on sapphire (SOS). Gunning with transceiver logic (GTL) and gunning with transceiver logic plus (GTLP) are also available. Flip-flops are available... Search by Specification | Learn More about Flip-flops
...transistors (MOSFETs) to implement logic gates and other digital circuits. Other logic families for shift registers include cross-bar switch technology (CBT), gallium arsenide (GaAs), integrated injection logic (I2L), and Gunning with transceiver logic... Search by Specification | Learn More about Shift Registers
Silicon (Si) and germanium (Ge), the most common electrical semiconductors, are used in many semiconductor components. Gallium arsenide (GaAs) and indium phosphide (InP) are examples of composite semiconductors that contain added materials or dopants... Learn More about Semiconductors and Semiconductor Materials
Laser protective eyewear includes glasses and goggles designed to filter out harmful radiation from lasers. Search by Specification | Learn More about Laser Protective Eyewear
...to implement logic gates and other digital circuits. Logic families for binary adders include crossbar switch technology (CBT), gallium arsenide (GaAs), integrated injection logic (I2L) and silicon on sapphire (SOS). Gunning transceiver logic (GTL... Search by Specification | Learn More about Binary Adders
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Search by Specification | Learn More about Transistors
RF amplifiers are devices that accept a varying input signal and produce an output signal that varies in the same way, but with larger amplitude. Search by Specification | Learn More about RF Amplifiers
Scalar network analyzers measure the amplitude portion of scattering or S-parameters, reflection and transmission coefficients between the incident and reflection waves that describe a device’s behavior under linear conditions at the microwave frequency range. Search by Specification | Learn More about Scalar Network Analyzers
RF switches route radio frequency signals to particular waveguides. Search by Specification | Learn More about RF Switches
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about RF Transistors
Ceramic powders and precursors contain oxides, carbides, nitrides, carbon, and other non-metals. They are usually micron or mesh-size in distribution. Ceramic powders, sol-gel solutions and precursors are fabricated through atomization, crushing, milling, precipitation, and other chemical processes. Search by Specification | Learn More about Ceramic Powders and Precursors
Cryogenic equipment produces or is used in the production of very low temperature materials or processes. Learn More about Cryogenic Equipment
|
||||||||
Low Stress LPCVD Nitride - < 250 MPa Tensile Rogue Valley Microdevices, Inc.
Accredited DoD Categroy 1A Trusted Foundry TriQuint Semiconductor, Inc.
USI Photonics - Micro-Optical Solutions Universal Semiconductor, Inc.
TQP13-N GaAs Foundry Process TriQuint Semiconductor, Inc.
Sputtered Metals including Cu, Al, and Ni Rogue Valley Microdevices, Inc.
Can your foundry do this? Universal Semiconductor, Inc.
|
Product News for GaAs MESFET
TQBiHEMT GaAs Foundry Process
TQBiHEMT integrates E/D pHEMT and HBT onto a single chip, thus reducing part count, saving board space and improving overall system costs. This process, well suited for applications with high data rates and frequencies, offers high levels of integration and functionality to accommodate today's increasingly demanding applications. Click here for more information: http://www.tqs.com/prodserv/fo... (read more)
TQP13-N GaAs Foundry Process
Building high performance millimeter wave applications has never been more cost-effective. TQP13-N incorporates optical lithography to greatly reduce the cost of production relative to similar processes based on E-beam gate lithography. For more information, visit: http://www.tqs.com/prodserv/foundry/docs/TQP13-N.pdf (read more)
Leading High-Power, High-Performance GaN Provider
Gallium Nitride (GaN) is known for its ability to handle greater power densities, offer more PAE and be more ESD resistant than other semiconductor technologies. As a leading GaN researcher, developer and manufacturer, TriQuint provides a compelling range of Gallium Nitride solutions. Visit our newly launched resource for GaN products and services. (read more)
Accredited DoD Categroy 1A Trusted Foundry
TriQuint Semiconductor, a leading RF product manufacturer and foundry services provider, has been accredited by the Department of Defense (DoD) as a Category 1A 'Trusted Foundry' for its 100mm gallium arsenide (GaAs) facilities in Richardson, TX. (read more)
ROSA / TOSA
Hamamatsu has a long history of manufacturing InGaAs and GaAs PIN photodiodes with built-in ampiflier to simplify circuit integration in the telecommunication and data communication markets. (read more)
** GPS LNA FEM with Integrated Filters
The ALM-1712 is a GPS front-end module that combines a low-noise amplifier (LNA) with GPS FBAR filters.
The LNA uses Avago Technologies' proprietary GaAs Enhancement-mode pHEMT process to achieve high gain with very low noise figure and high linearity. (read more)
3.3 - 3.9GHz 1/2 Wtt High Linearity Amplifier
Avago Technologies' MGA-30316 is a high linearity ½ Watt PA with good OIP3 performance and exceptionally good PAE at p1dB gain compression point, achieved through the use of Avago Technologies' proprietary 0.25um GaAs Enhancement-mode pHEMT process. (read more)
Low Noise High Linearity Balanced Amplifier Module
ALM-1522 is a low noise, high gain and high linearity balanced amplifier module operating in the 700MHz to 1100MHz frequency range. (read more)
Wafer Carriers in Sapphire
Insaco, Inc has become recognized as a worldwide leader in custom machined ceramic and sapphire parts for the semiconductor industry. Through this experience, Insaco is now able to offer multiple hole wafer carriers in sapphire for GaAs and other semiconductors. (read more)
Wafer Measurement System from MTI Instruments
Proforma 200SA - Semi-automated, full wafer surface scanning for thickness, TTV, bow, warp, site and global flatness. The Proforma 200SA can be used for all wafer materials and accommodates diameters 75 - 300 mm. (read more)
Parts by Number for GaAs MESFET
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| NE650103M-A | Digi-Key | NEC | Discrete Semiconductor Products | MESFET GAAS 2.7GHZ 3M |
| RF2360TR7 | Digi-Key | RFMD | RF and RFID | IC AMP MESFET GAAS CATV 16-SOP |
Conduct Research
-
M540: GaAs MMIC Low Noise Amplifiers (SOIC-8 Platform)
Early in 1994, M/A-COM began offering a family of plastic packaged GaAs MMIC low noise amplifiers (LNAs) featuring single positive supply voltage, low noise figure, high dynamic range, and low power...(read more)
-
TA026: Application of Loadline Simulation to MSAG® Microwave High Power Amplifiers
Loadline theory is described as applied to high power microwave amplifiers. An example design with simulation is presented. The design of microwave GaAs high power amplifiers (HPAs) to demanding...(read more)
-
TA025: 10W CW Broadband Balanced Limiter / LNA Fabricated Using MSAG® MESFET Process
This paper presents the design and test data for a 10W broadband balanced limiter/LNA MMIC fabricated using MSAG MESFET process. The limiter is based on Schottky diodes and the 2-stage LNA is designed...(read more)
-
M537: GaAs MMIC Based Control Components with Integral Drivers
This application note describes the fundamental operation and features of a new series of control components. These switches comprise a family of devices that use GaAs FET MMIC technology for the RF...(read more)
-
TA028: GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While Reducing Chip Size and Cost
After some 20+ years of DoD technology development, the commercial wireless market has become the driving force for the GaAs MMIC industry. As the very low-cost requirements of the wireless industry...(read more)
-
TA048: High Performance Wideband MSAG Gain Block/Driver Amplifier MMICs Using MLP Technology
The multi-level plating (MLP) process has been used to develop a family of wideband, low noise, generic gain block and driver amplifier MMICs operating up to 20 GHz. MLP implementation provides...(read more)
|
GaAs FET MESFET :: Radio-Electronics.Com GaAs FET MESFET - overview or tutorial about the basics and essential details of the GaAs Fet or |
|
|
MicroWave Technology, Inc. - Leading manufacturer of RF and... GaAs MESFET Chips Power PHEMTs MMIC Amplifiers NEW Has Your GaAs MESFET, PHEMT Discrete Device or MMIC Been Discontinued? See MicroWave Technology, Inc. Information |
|
|
Smart IC Maintains Uniform Bias Current For GaAs MESFETs -... Keywords: MESFETs, Gallium-Arsenide, GaAs MESFETs, current sense amps, current sensing, mesfet, metal semiconductor field effect transistors See Maxim Integrated Products, Inc. Information |
|
|
MicroNote 703 Silicon PIN Diode and GaAs MESFET Switches and... MicroNote 703 Silicon PIN Diode and GaAs MESFET Switches and Their Effects On Linearity of Digital Communications Systems William E. Doherty, Jr. See Microsemi Corp. Information |
|
|
Semiconductor: 3SK240 (3SK 240) - GAAS MESFET English in ?: Semiconductor: 3SK240 (3SK 240) - GAAS MESFET UK Site in ?: Semiconductor: 3SK240 (3SK 240) - GAAS MESFET |
|
|
Bias dependence of GaAs and InP MESFET parameters Devices, IEEE Transactions on Item Title: Bias dependence of GaAs and InP MESFET parameters Publisher Name: IEEE Country: USA Volume: 24 Issue: 11 |
|
|
A comparative analysis of GaAs and Si ion-implanted MESFET's IEEE Transactions on Item Title: A comparative analysis of GaAs and Si ion-implanted MESFET's Publisher Name: IEEE Country: USA Volume: 33 Issue: 7 |
|
|
GaAs MESFET Static RAM Design for Embedded Applications -... GaAs MESFET Static RAM Design for Embedded Applications See Storming Media LLC Information |
|
|
Single-Event Analysis of LT GaAs Mesfet Integrated Circuits -... Single-Event Analysis of LT GaAs Mesfet Integrated Circuits See Storming Media LLC Information |
|
|
IBM Technical Journals It is well known that reducing gate length is a powerful means to increase the transconductance and transit frequency of GaAs MESFET devices. |
More >>
